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MITSUBISHI TRANSISTOR MODULES
QM75DY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
QM75DY-H
* * * * *
IC Collector current .......................... 75A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
94 (7) 20
10.5 13 10.5
80 20 27
(7) 6.5
B2 E2
B2 E2 C1
34
C2E1 C2E1 E2 C1 12
E1 B1
E2
E1 B1 Tab#110, t=0.5
6.5
M5
31
LABEL
(8)
22.5
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75DY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage
(Tj=25C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 75 75 350 4.5 750 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.96~2.94 20~30 210 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g
--
Mounting torque Mounting screw M6
--
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25C, unless otherwise noted)
Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=75A, IB=1A -IC=75A (diode forward voltage) IC=75A, VCE=2V/5V Min. -- -- -- -- -- -- 75/100 -- VCC=300V, IC=75A, IB1=-IB2=1.5A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 75 2.0 2.5 1.85 -- 2.5 12 3.0 0.35 1.3 0.15 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75DY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL)
200 Tj=25C 2 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 0
DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT IC (A)
DC CURRENT GAIN hFE
160 IB=2.0A 120 IB=1.5A IB=1.0A 80 IB=0.5A
VCE=5.0V VCE=2.0V
40
0
0
1
2
3
4
5
2 3 4 5 7 10 1
Tj=25C Tj=125C 2 3 4 5 7 10 2
COLLECTOR-EMITTER VOLTAGE
VCE (V)
COLLECTOR CURRENT IC (A)
VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL)
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 1.0 1.4 1.8 2.2 VCE=2.0V Tj=25C 3.0 2.6
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
101 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 10 1 IB=1A Tj=25C Tj=125C VBE(sat)
BASE CURRENT IB (A)
SATURATION VOLTAGE
VCE(sat)
2 3 4 5 7 10 2
2 3 4 5 7 10 3
BASE-EMITTER VOLTAGE
VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
5 2
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
ton, ts, tf (s)
4
IC=100A
3
SWITCHING TIME
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 0
ts VCC=300V IB1=-IB2=1.5A Tj=25C Tj=125C tf
2
IC=75A IC=50A
1
Tj=25C IC=30A Tj=125C 0 10 -2 2 3 4 5 7 10 -12 3 4 5 7 10 0 2 3 4 5 7 10 1
ton 2 3 4 5 7 10 1 2 3 4 5 7 10 2
BASE CURRENT IB (A)
COLLECTOR CURRENT
IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75DY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE CURRENT (TYPICAL)
2 VCC=300V IC=75A IB1=1.5A
REVERSE BIAS SAFE OPERATING AREA
160
COLLECTOR CURRENT IC (A)
SWITCHING TIME
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 0
ts, tf (s)
140 120 100 IB2=-5A 80 60 40 20
Tj=125C
ts
IB2=-2A
tf
Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2
0
0
100 200 300 400 500 600 700 800
BASE REVERSE CURRENT -IB2 (A)
COLLECTOR-EMITTER VOLTAGE
VCE (V)
FORWARD BIAS SAFE OPERATING AREA
10 3 7 5 3 2 10 2 7 5 3 2 100 90 100s tw=50s
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR CURRENT IC (A)
DERATING FACTOR (%)
80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION
SECOND BREAKDOWN AREA
D
10
C
m
s
5 1m 00 s s
10 1 7 5 3 2 TC=25C NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
80 100 120 140 160
COLLECTOR-EMITTER VOLTAGE
VCE (V)
CASE TEMPERATURE
TC (C)
COLLECTOR REVERSE CURRENT -IC (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 710 1 2 3 0.5
0.4
Zth (j-c) (C/ W)
10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0
REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL)
0.3
0.2
0.1 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0
Tj=25C Tj=125C 0 0.4 0.8 1.2 1.6 2.0
TIME (s)
COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75DY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 800 700 600 500 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 Irr (A), Qrr (c)
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 10 0 2 3 4 5 7 10 1 10 1 VCC=300V IB1=-IB2=1.5A Tj=25C Tj=125C
Irr
Qrr
10 0
trr
10 -1 2 3 4 5 7 10 2
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT IF (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 710 1 2 3 4 5 7 2.0 1.6 Zth (j-c) (C/ W)
1.2
0.8
0.4 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -12 3 4 5 7 10 0 TIME (s)
Feb.1999
trr (s)

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